Memory cell configuration
The invention relates to a memory cell configuration with memory elements having a layer structure with a giant magnetoresistive effect. A memory cell configuration has word lines and bit lines running transversely with respect thereto. Memory elements with a magnetoresistive effect are respectively...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Schwarzl, Siegfried Risch, Lothar |
| description | The invention relates to a memory cell configuration with memory elements having a layer structure with a giant magnetoresistive effect.
A memory cell configuration has word lines and bit lines running transversely with respect thereto. Memory elements with a magnetoresistive effect are respectively connected between one of the word lines and one of the bit lines. The memory elements are disposed in at least two layers one above the other. |
| format | Patent |
| fullrecord | <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_06351408</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>06351408</sourcerecordid><originalsourceid>FETCH-uspatents_grants_063514083</originalsourceid><addsrcrecordid>eNrjZJD0Tc3NL6pUSE7NyVFIzs9Ly0wvLUosyczP42FgTUvMKU7lhdLcDApuriHOHrqlxQWJJal5JcXx6UWJIMrAzNjU0MTAwpgIJQAWhiO1</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Memory cell configuration</title><source>USPTO Issued Patents</source><creator>Schwarzl, Siegfried ; Risch, Lothar</creator><creatorcontrib>Schwarzl, Siegfried ; Risch, Lothar ; Infineon Technologies AG</creatorcontrib><description>The invention relates to a memory cell configuration with memory elements having a layer structure with a giant magnetoresistive effect.
A memory cell configuration has word lines and bit lines running transversely with respect thereto. Memory elements with a magnetoresistive effect are respectively connected between one of the word lines and one of the bit lines. The memory elements are disposed in at least two layers one above the other.</description><language>eng</language><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6351408$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,309,781,803,886,64043</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6351408$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Schwarzl, Siegfried</creatorcontrib><creatorcontrib>Risch, Lothar</creatorcontrib><creatorcontrib>Infineon Technologies AG</creatorcontrib><title>Memory cell configuration</title><description>The invention relates to a memory cell configuration with memory elements having a layer structure with a giant magnetoresistive effect.
A memory cell configuration has word lines and bit lines running transversely with respect thereto. Memory elements with a magnetoresistive effect are respectively connected between one of the word lines and one of the bit lines. The memory elements are disposed in at least two layers one above the other.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZJD0Tc3NL6pUSE7NyVFIzs9Ly0wvLUosyczP42FgTUvMKU7lhdLcDApuriHOHrqlxQWJJal5JcXx6UWJIMrAzNjU0MTAwpgIJQAWhiO1</recordid><startdate>20020226</startdate><enddate>20020226</enddate><creator>Schwarzl, Siegfried</creator><creator>Risch, Lothar</creator><scope>EFH</scope></search><sort><creationdate>20020226</creationdate><title>Memory cell configuration</title><author>Schwarzl, Siegfried ; Risch, Lothar</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_063514083</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Schwarzl, Siegfried</creatorcontrib><creatorcontrib>Risch, Lothar</creatorcontrib><creatorcontrib>Infineon Technologies AG</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Schwarzl, Siegfried</au><au>Risch, Lothar</au><aucorp>Infineon Technologies AG</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Memory cell configuration</title><date>2002-02-26</date><risdate>2002</risdate><abstract>The invention relates to a memory cell configuration with memory elements having a layer structure with a giant magnetoresistive effect.
A memory cell configuration has word lines and bit lines running transversely with respect thereto. Memory elements with a magnetoresistive effect are respectively connected between one of the word lines and one of the bit lines. The memory elements are disposed in at least two layers one above the other.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_uspatents_grants_06351408 |
| source | USPTO Issued Patents |
| title | Memory cell configuration |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T10%3A49%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Schwarzl,%20Siegfried&rft.aucorp=Infineon%20Technologies%20AG&rft.date=2002-02-26&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E06351408%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |