Memory cell configuration
The invention relates to a memory cell configuration with memory elements having a layer structure with a giant magnetoresistive effect. A memory cell configuration has word lines and bit lines running transversely with respect thereto. Memory elements with a magnetoresistive effect are respectively...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The invention relates to a memory cell configuration with memory elements having a layer structure with a giant magnetoresistive effect.
A memory cell configuration has word lines and bit lines running transversely with respect thereto. Memory elements with a magnetoresistive effect are respectively connected between one of the word lines and one of the bit lines. The memory elements are disposed in at least two layers one above the other. |
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