Voltage limiting bias circuit for reduction of hot electron degradation effects in MOS cascode circuits

This invention relates generally to stabilizing the operational performance of MOS circuits and specifically to minimizing limitations on cascode amplifier circuit performance and reliability caused by excessive substrate current induced by hot electrons from high drain-to-source voltages. MOS Casco...

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Bibliographische Detailangaben

1. Verfasser:	Gradzki, Pawel M
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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