Integrated low K dielectrics and etch stops

1. Field of the Invention A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bjorkman, Claes H, Yu, Min Melissa, Shan, Hongquing, Cheung, David W, Yau, Wai-Fan, Liu, Kuowei, Chapra, Nasreen Gazala, Yin, Gerald, Moghadam, Farhad K, Huang, Judy H, Yost, Dennis, Tang, Betty, Kim, Yunsang
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!