Magnetic random access memory and method of manufacturing the same
A magnetic random access memory includes a substrate; a first ferromagnetic layer; a magnetic tunnel junction (MTJ) device provided on a same side of the substrate as the first ferromagnetic layer; and a wiring layer provided between the first ferromagnetic layer and the MTJ device. The MTJ device i...
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| creator | Honjo, Hiroaki Saitho, Shinsaku |
| description | A magnetic random access memory includes a substrate; a first ferromagnetic layer; a magnetic tunnel junction (MTJ) device provided on a same side of the substrate as the first ferromagnetic layer; and a wiring layer provided between the first ferromagnetic layer and the MTJ device. The MTJ device includes a second ferromagnetic layer opposing to the wiring layer. A first perpendicular projection of the first ferromagnetic layer on the substrate and a second perpendicular projection of the second ferromagnetic layer on the substrate are different in area, and one of the first and second perpendicular projections contains the other. |
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| title | Magnetic random access memory and method of manufacturing the same |
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