METHOD FOR FABRICATING BIPOLAR TRANSISTOR
A method for fabricating a bipolar transistor includes: a first step of implanting, along the normal direction of the principle surface of a first-conductive-type semiconductor single crystalline substrate, ions of a second-conductive-type first impurity into the semiconductor single crystalline sub...
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| creator | Shindo, Masao |
| description | A method for fabricating a bipolar transistor includes: a first step of implanting, along the normal direction of the principle surface of a first-conductive-type semiconductor single crystalline substrate, ions of a second-conductive-type first impurity into the semiconductor single crystalline substrate to form a second-conductive-type collector layer; a second step of implanting, along the direction tilted from the normal direction, ions of a second-conductive-type second impurity into the semiconductor single crystalline substrate at a higher injection energy than that in the ion implantation of the first step to form a buried collector layer in a lower portion of the collector layer; and a third step of forming each of a first-conductive-type base layer and a second-conductive-type emitter layer in a predetermined region of a surface portion of the collector layer. |
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a second step of implanting, along the direction tilted from the normal direction, ions of a second-conductive-type second impurity into the semiconductor single crystalline substrate at a higher injection energy than that in the ion implantation of the first step to form a buried collector layer in a lower portion of the collector layer; and a third step of forming each of a first-conductive-type base layer and a second-conductive-type emitter layer in a predetermined region of a surface portion of the collector layer.</description><language>eng</language><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20040192005$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,873,885,64059</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/10781642$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Shindo, Masao</creatorcontrib><title>METHOD FOR FABRICATING BIPOLAR TRANSISTOR</title><description>A method for fabricating a bipolar transistor includes: a first step of implanting, along the normal direction of the principle surface of a first-conductive-type semiconductor single crystalline substrate, ions of a second-conductive-type first impurity into the semiconductor single crystalline substrate to form a second-conductive-type collector layer; a second step of implanting, along the direction tilted from the normal direction, ions of a second-conductive-type second impurity into the semiconductor single crystalline substrate at a higher injection energy than that in the ion implantation of the first step to form a buried collector layer in a lower portion of the collector layer; and a third step of forming each of a first-conductive-type base layer and a second-conductive-type emitter layer in a predetermined region of a surface portion of the collector layer.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EFI</sourceid><recordid>eNrjZND0dQ3x8HdRcPMPUnBzdArydHYM8fRzV3DyDPD3cQxSCAly9Av2DA7xD-JhYE1LzClO5YXS3Ayabq4hzh66pcUFiSWpeSXF8YkFBTmZyYklmfl5xfFGBgYmBoaWQMrUmBS1ABa7K3I</recordid><startdate>20040930</startdate><enddate>20040930</enddate><creator>Shindo, Masao</creator><scope>EFI</scope></search><sort><creationdate>20040930</creationdate><title>METHOD FOR FABRICATING BIPOLAR TRANSISTOR</title><author>Shindo, Masao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_applications_200401920053</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Shindo, Masao</creatorcontrib><collection>USPTO Published Applications</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shindo, Masao</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR FABRICATING BIPOLAR TRANSISTOR</title><date>2004-09-30</date><risdate>2004</risdate><abstract>A method for fabricating a bipolar transistor includes: a first step of implanting, along the normal direction of the principle surface of a first-conductive-type semiconductor single crystalline substrate, ions of a second-conductive-type first impurity into the semiconductor single crystalline substrate to form a second-conductive-type collector layer; a second step of implanting, along the direction tilted from the normal direction, ions of a second-conductive-type second impurity into the semiconductor single crystalline substrate at a higher injection energy than that in the ion implantation of the first step to form a buried collector layer in a lower portion of the collector layer; and a third step of forming each of a first-conductive-type base layer and a second-conductive-type emitter layer in a predetermined region of a surface portion of the collector layer.</abstract><oa>free_for_read</oa></addata></record> |
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| source | USPTO Published Applications |
| title | METHOD FOR FABRICATING BIPOLAR TRANSISTOR |
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