Photoimageable dielectric epoxy resin system film

A method for fabricating circuitized substrates which reduces shorts, and does not require baking and resulting film. The method employs a photoimageable dielectric film, having a solvent content less than about 5%, and a glass transition temperature, when cured, which is greater than about 110° C....

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Hauptverfasser: Foster, Elizabeth, Johansson, Gary, Marcello, Heike, Russell, David
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Sprache:eng
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creator Foster, Elizabeth
Johansson, Gary
Marcello, Heike
Russell, David
description A method for fabricating circuitized substrates which reduces shorts, and does not require baking and resulting film. The method employs a photoimageable dielectric film, having a solvent content less than about 5%, and a glass transition temperature, when cured, which is greater than about 110° C. A photoimageable dielectric film is provided having from about 95% to about 100% solids, and comprising: from 0% to about 30% of the solids, of a particulate rheology modifier; from about 70% to about 100% of the solids of an epoxy resin system (liquid at 20° C.) comprising: from about 85% to about 99.9% epoxy resins; and from about 0.1 to 15 parts of the total resin weight, a cationic photoinitiator; from 0% to about 5% solvent; applying the photoimageable dielectric film to a circuitized substrate; and exposing the film to actinic radiation.
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The method employs a photoimageable dielectric film, having a solvent content less than about 5%, and a glass transition temperature, when cured, which is greater than about 110° C. A photoimageable dielectric film is provided having from about 95% to about 100% solids, and comprising: from 0% to about 30% of the solids, of a particulate rheology modifier; from about 70% to about 100% of the solids of an epoxy resin system (liquid at 20° C.) comprising: from about 85% to about 99.9% epoxy resins; and from about 0.1 to 15 parts of the total resin weight, a cationic photoinitiator; from 0% to about 5% solvent; applying the photoimageable dielectric film to a circuitized substrate; and exposing the film to actinic radiation.</description><language>eng</language><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20040161702$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,873,885,64059</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/10781073$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Foster, Elizabeth</creatorcontrib><creatorcontrib>Johansson, Gary</creatorcontrib><creatorcontrib>Marcello, Heike</creatorcontrib><creatorcontrib>Russell, David</creatorcontrib><title>Photoimageable dielectric epoxy resin system film</title><description>A method for fabricating circuitized substrates which reduces shorts, and does not require baking and resulting film. 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The method employs a photoimageable dielectric film, having a solvent content less than about 5%, and a glass transition temperature, when cured, which is greater than about 110° C. A photoimageable dielectric film is provided having from about 95% to about 100% solids, and comprising: from 0% to about 30% of the solids, of a particulate rheology modifier; from about 70% to about 100% of the solids of an epoxy resin system (liquid at 20° C.) comprising: from about 85% to about 99.9% epoxy resins; and from about 0.1 to 15 parts of the total resin weight, a cationic photoinitiator; from 0% to about 5% solvent; applying the photoimageable dielectric film to a circuitized substrate; and exposing the film to actinic radiation.</abstract><oa>free_for_read</oa></addata></record>
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title Photoimageable dielectric epoxy resin system film
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