Method of manufacturing semiconductor local interconnect and contact

An integrated circuit, and manufacturing method therefor, is provided. A gate dielectric and a gate are provided respectively on and over a semiconductor substrate. A junction is formed adjacent the gate dielectric and a shaped spacer is formed around the gate. A spacer is formed under the shaped sp...

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Bibliographische Detailangaben

Hauptverfasser:	Chen, Tong, Yelehanka, Pradeep, Han, Zhi, Zheng, Jia, Ong, Kelvin, Gu, Tian, Cheah, Syn
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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