Test structure for determining a region of a deep trench outdiffusion in a memory cell array

A test structure for determining a doping region of an outer capacitor electrode of a trench capacitor in a memory cell array. The trench capacitors of the memory cell array are arranged in matrix form. The test structure has two parallel rows of trench capacitors. The outer capacitor electrode of e...

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Bibliographische Detailangaben
Hauptverfasser: Felber, Andreas, Rosskopf, Valentin
Format: Patent
Sprache:eng
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