Dynamic random access memory with improved contact arrangements

A semiconductor integrated circuit device and a manufacturing method therefor provide advantages that undulations are prevented from being produced in polycrystal silicon plugs in bit line contact holes and that the undesired phenomenon of transversally etching silicide film at contacts of the bit l...

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Bibliographische Detailangaben

Hauptverfasser:	Aoki, Hideo, Nakamura, Yoshitaka, Ohira, Yoshikazu, Umezawa, Tadashi, Yamada, Satoru, Kawakita, Keizou, Asano, Isamu, Fukuda, Naoki, Tamaru, Tsuyoshi, Goto, Hidekazu, Kobayashi, Nobuyoshi
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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