Etchant and method of etching

Etchant and method of etching

An etchant for patterning thin metal films by wet etching and in particular, an etchant for use in producing semiconductor devices, such as semiconductor elements and liquid-crystal display elements, is for application to a multilayer film having a first layer made of aluminum or an aluminum alloy h...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yoshida, Takuji, Saitou, Noriyuki, Inoue, Kazunori, Ishikawa, Makoto, Kamiharaguchi, Yoshio
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Yoshida, Takuji
Saitou, Noriyuki
Inoue, Kazunori
Ishikawa, Makoto
Kamiharaguchi, Yoshio
description An etchant for patterning thin metal films by wet etching and in particular, an etchant for use in producing semiconductor devices, such as semiconductor elements and liquid-crystal display elements, is for application to a multilayer film having a first layer made of aluminum or an aluminum alloy having formed thereon a second layer made of aluminum or an aluminum alloy each containing at least one element selected from nitrogen, oxygen, silicon, and carbon, and has a phosphoric acid content of from 35 to 65% by weight and a nitric acid content of from 0.5 to 15% by weight; and an etching is performed using the etchant.
format Patent
fullrecord <record><control><sourceid>uspatents_EFI</sourceid><recordid>TN_cdi_uspatents_applications_20030207513</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20030207513</sourcerecordid><originalsourceid>FETCH-uspatents_applications_200302075133</originalsourceid><addsrcrecordid>eNrjZJB1LUnOSMwrUUjMS1HITS3JyE9RyE9TSAWKZual8zCwpiXmFKfyQmluBk031xBnD93S4oLEktS8kuL4xIKCnMzkxJLM_LzieCMDA2MDIwNzU0NjY1LUAgB6kyq0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Etchant and method of etching</title><source>USPTO Published Applications</source><creator>Yoshida, Takuji ; Saitou, Noriyuki ; Inoue, Kazunori ; Ishikawa, Makoto ; Kamiharaguchi, Yoshio</creator><creatorcontrib>Yoshida, Takuji ; Saitou, Noriyuki ; Inoue, Kazunori ; Ishikawa, Makoto ; Kamiharaguchi, Yoshio</creatorcontrib><description>An etchant for patterning thin metal films by wet etching and in particular, an etchant for use in producing semiconductor devices, such as semiconductor elements and liquid-crystal display elements, is for application to a multilayer film having a first layer made of aluminum or an aluminum alloy having formed thereon a second layer made of aluminum or an aluminum alloy each containing at least one element selected from nitrogen, oxygen, silicon, and carbon, and has a phosphoric acid content of from 35 to 65% by weight and a nitric acid content of from 0.5 to 15% by weight; and an etching is performed using the etchant.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030207513$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,869,881,64035</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/10419179$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Yoshida, Takuji</creatorcontrib><creatorcontrib>Saitou, Noriyuki</creatorcontrib><creatorcontrib>Inoue, Kazunori</creatorcontrib><creatorcontrib>Ishikawa, Makoto</creatorcontrib><creatorcontrib>Kamiharaguchi, Yoshio</creatorcontrib><title>Etchant and method of etching</title><description>An etchant for patterning thin metal films by wet etching and in particular, an etchant for use in producing semiconductor devices, such as semiconductor elements and liquid-crystal display elements, is for application to a multilayer film having a first layer made of aluminum or an aluminum alloy having formed thereon a second layer made of aluminum or an aluminum alloy each containing at least one element selected from nitrogen, oxygen, silicon, and carbon, and has a phosphoric acid content of from 35 to 65% by weight and a nitric acid content of from 0.5 to 15% by weight; and an etching is performed using the etchant.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFI</sourceid><recordid>eNrjZJB1LUnOSMwrUUjMS1HITS3JyE9RyE9TSAWKZual8zCwpiXmFKfyQmluBk031xBnD93S4oLEktS8kuL4xIKCnMzkxJLM_LzieCMDA2MDIwNzU0NjY1LUAgB6kyq0</recordid><startdate>20031106</startdate><enddate>20031106</enddate><creator>Yoshida, Takuji</creator><creator>Saitou, Noriyuki</creator><creator>Inoue, Kazunori</creator><creator>Ishikawa, Makoto</creator><creator>Kamiharaguchi, Yoshio</creator><scope>EFI</scope></search><sort><creationdate>20031106</creationdate><title>Etchant and method of etching</title><author>Yoshida, Takuji ; Saitou, Noriyuki ; Inoue, Kazunori ; Ishikawa, Makoto ; Kamiharaguchi, Yoshio</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_applications_200302075133</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Yoshida, Takuji</creatorcontrib><creatorcontrib>Saitou, Noriyuki</creatorcontrib><creatorcontrib>Inoue, Kazunori</creatorcontrib><creatorcontrib>Ishikawa, Makoto</creatorcontrib><creatorcontrib>Kamiharaguchi, Yoshio</creatorcontrib><collection>USPTO Published Applications</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yoshida, Takuji</au><au>Saitou, Noriyuki</au><au>Inoue, Kazunori</au><au>Ishikawa, Makoto</au><au>Kamiharaguchi, Yoshio</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Etchant and method of etching</title><date>2003-11-06</date><risdate>2003</risdate><abstract>An etchant for patterning thin metal films by wet etching and in particular, an etchant for use in producing semiconductor devices, such as semiconductor elements and liquid-crystal display elements, is for application to a multilayer film having a first layer made of aluminum or an aluminum alloy having formed thereon a second layer made of aluminum or an aluminum alloy each containing at least one element selected from nitrogen, oxygen, silicon, and carbon, and has a phosphoric acid content of from 35 to 65% by weight and a nitric acid content of from 0.5 to 15% by weight; and an etching is performed using the etchant.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_applications_20030207513
source USPTO Published Applications
title Etchant and method of etching
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T14%3A49%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFI&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Yoshida,%20Takuji&rft.date=2003-11-06&rft_id=info:doi/&rft_dat=%3Cuspatents_EFI%3E20030207513%3C/uspatents_EFI%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true