SOI transistor element having an improved backside contact and method of forming the same

The present invention relates to a method of forming contacts of semiconductor devices manufactured on silicon-on-oxide (SOI) wafers. According to the method of the present invention, a heavily doped region is formed in the backside silicon layer during the manufacturing process and a backside conta...

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Bibliographische Detailangaben

Hauptverfasser:	Burbach, Gert, Aminpur, Massud
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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