Etching multi-shaped openings in silicon

Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the e...

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Hauptverfasser: Khan, Anisul, Pamarthy, Sharma, Thekdi, Sanjay, Kumar, Ajay
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creator Khan, Anisul
Pamarthy, Sharma
Thekdi, Sanjay
Kumar, Ajay
description Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.
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fullrecord <record><control><sourceid>uspatents_EFI</sourceid><recordid>TN_cdi_uspatents_applications_20030189024</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20030189024</sourcerecordid><originalsourceid>FETCH-uspatents_applications_200301890243</originalsourceid><addsrcrecordid>eNrjZNBwLUnOyMxLV8gtzSnJ1C3OSCxITVHIL0jNAwoWK2TmKRRn5mQm5-fxMLCmJeYUp_JCaW4GTTfXEGcP3dLigsSS1LyS4vjEggKg0sSSzPy84ngjAwNjA0MLSwMjE2NS1AIA8ukvUw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Etching multi-shaped openings in silicon</title><source>USPTO Published Applications</source><creator>Khan, Anisul ; Pamarthy, Sharma ; Thekdi, Sanjay ; Kumar, Ajay</creator><creatorcontrib>Khan, Anisul ; Pamarthy, Sharma ; Thekdi, Sanjay ; Kumar, Ajay</creatorcontrib><description>Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030189024$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,869,881,64032</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/10118763$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Khan, Anisul</creatorcontrib><creatorcontrib>Pamarthy, Sharma</creatorcontrib><creatorcontrib>Thekdi, Sanjay</creatorcontrib><creatorcontrib>Kumar, Ajay</creatorcontrib><title>Etching multi-shaped openings in silicon</title><description>Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFI</sourceid><recordid>eNrjZNBwLUnOyMxLV8gtzSnJ1C3OSCxITVHIL0jNAwoWK2TmKRRn5mQm5-fxMLCmJeYUp_JCaW4GTTfXEGcP3dLigsSS1LyS4vjEggKg0sSSzPy84ngjAwNjA0MLSwMjE2NS1AIA8ukvUw</recordid><startdate>20031009</startdate><enddate>20031009</enddate><creator>Khan, Anisul</creator><creator>Pamarthy, Sharma</creator><creator>Thekdi, Sanjay</creator><creator>Kumar, Ajay</creator><scope>EFI</scope></search><sort><creationdate>20031009</creationdate><title>Etching multi-shaped openings in silicon</title><author>Khan, Anisul ; Pamarthy, Sharma ; Thekdi, Sanjay ; Kumar, Ajay</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_applications_200301890243</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Khan, Anisul</creatorcontrib><creatorcontrib>Pamarthy, Sharma</creatorcontrib><creatorcontrib>Thekdi, Sanjay</creatorcontrib><creatorcontrib>Kumar, Ajay</creatorcontrib><collection>USPTO Published Applications</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Khan, Anisul</au><au>Pamarthy, Sharma</au><au>Thekdi, Sanjay</au><au>Kumar, Ajay</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Etching multi-shaped openings in silicon</title><date>2003-10-09</date><risdate>2003</risdate><abstract>Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.</abstract><oa>free_for_read</oa></addata></record>
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title Etching multi-shaped openings in silicon
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T05%3A55%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFI&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Khan,%20Anisul&rft.date=2003-10-09&rft_id=info:doi/&rft_dat=%3Cuspatents_EFI%3E20030189024%3C/uspatents_EFI%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true