Method for depositing in particular crystalline layers, gas-admission element and device for carrying out the method

The invention relates to a method and to a device for carrying out the method for depositing, in particular, crystalline layers on substrates that are also, in particular, crystalline. According to the invention, at least two process gases are introduced separate from one another into a process chamber of a reactor, whereby the first process gas flows through a central line having a central outlet opening, and the second process gas flows through a line, which is peripheral thereto and which has a peripheral outlet opening. The second process gas flows through one or more supply lines and into a mixing chamber and flows through additional means, which influence the gas stream and which are provided for homogenizing the radial flow profile of the process gas exiting the peripheral outlet opening. The aim of the invention is to obtain a homogeneous radial flow profile by using simple means. To this end, the invention provides that the second process gas flows through a flow influencing element, which is situated downstream from the mixing chamber and which is provided, in particular, in the form of an annular throttle or of turbulence generator, and flows through an annular pre-chamber situated downstream therefrom, after which said second process gas exits through a gas-permeable gas outlet ring.