Semiconductor chip mounting wafer

A plurality of semiconductor chips such as a dynamic random access memory are formed on a wafer. The semiconductor chips are partitioned by a dicing line region. A silicon oxide film is formed on the wafer. A corrugated groove is formed on an insulating film located in the dicing line region. A meta...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Hirokawa, Taichi, Kobayashi, Heiji
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Hirokawa, Taichi
Kobayashi, Heiji
description A plurality of semiconductor chips such as a dynamic random access memory are formed on a wafer. The semiconductor chips are partitioned by a dicing line region. A silicon oxide film is formed on the wafer. A corrugated groove is formed on an insulating film located in the dicing line region. A metal film such as barrier metal constituting the semiconductor chips is formed so as to cover a surface of the corrugated groove. A film stress of the metal film is dispersed in multiple directions. It is thereby possible to obtain a semiconductor chip mounting wafer capable of ensuring relaxing wafer warping and suppressing an electrostatic chuck error.
format Patent
fullrecord <record><control><sourceid>uspatents_EFI</sourceid><recordid>TN_cdi_uspatents_applications_20030160303</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20030160303</sourcerecordid><originalsourceid>FETCH-uspatents_applications_200301603033</originalsourceid><addsrcrecordid>eNrjZFAMTs3NTM7PSylNLskvUkjOyCxQyM0vzSvJzEtXKE9MSy3iYWBNS8wpTuWF0twMmm6uIc4euqXFBYklqXklxfGJBQU5mcmJJZn5ecXxRgYGxgaGZkDC2JgUtQCgJizl</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor chip mounting wafer</title><source>USPTO Published Applications</source><creator>Hirokawa, Taichi ; Kobayashi, Heiji</creator><creatorcontrib>Hirokawa, Taichi ; Kobayashi, Heiji</creatorcontrib><description>A plurality of semiconductor chips such as a dynamic random access memory are formed on a wafer. The semiconductor chips are partitioned by a dicing line region. A silicon oxide film is formed on the wafer. A corrugated groove is formed on an insulating film located in the dicing line region. A metal film such as barrier metal constituting the semiconductor chips is formed so as to cover a surface of the corrugated groove. A film stress of the metal film is dispersed in multiple directions. It is thereby possible to obtain a semiconductor chip mounting wafer capable of ensuring relaxing wafer warping and suppressing an electrostatic chuck error.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030160303$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,869,881,64032</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/10327889$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hirokawa, Taichi</creatorcontrib><creatorcontrib>Kobayashi, Heiji</creatorcontrib><title>Semiconductor chip mounting wafer</title><description>A plurality of semiconductor chips such as a dynamic random access memory are formed on a wafer. The semiconductor chips are partitioned by a dicing line region. A silicon oxide film is formed on the wafer. A corrugated groove is formed on an insulating film located in the dicing line region. A metal film such as barrier metal constituting the semiconductor chips is formed so as to cover a surface of the corrugated groove. A film stress of the metal film is dispersed in multiple directions. It is thereby possible to obtain a semiconductor chip mounting wafer capable of ensuring relaxing wafer warping and suppressing an electrostatic chuck error.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFI</sourceid><recordid>eNrjZFAMTs3NTM7PSylNLskvUkjOyCxQyM0vzSvJzEtXKE9MSy3iYWBNS8wpTuWF0twMmm6uIc4euqXFBYklqXklxfGJBQU5mcmJJZn5ecXxRgYGxgaGZkDC2JgUtQCgJizl</recordid><startdate>20030828</startdate><enddate>20030828</enddate><creator>Hirokawa, Taichi</creator><creator>Kobayashi, Heiji</creator><scope>EFI</scope></search><sort><creationdate>20030828</creationdate><title>Semiconductor chip mounting wafer</title><author>Hirokawa, Taichi ; Kobayashi, Heiji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_applications_200301603033</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Hirokawa, Taichi</creatorcontrib><creatorcontrib>Kobayashi, Heiji</creatorcontrib><collection>USPTO Published Applications</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hirokawa, Taichi</au><au>Kobayashi, Heiji</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor chip mounting wafer</title><date>2003-08-28</date><risdate>2003</risdate><abstract>A plurality of semiconductor chips such as a dynamic random access memory are formed on a wafer. The semiconductor chips are partitioned by a dicing line region. A silicon oxide film is formed on the wafer. A corrugated groove is formed on an insulating film located in the dicing line region. A metal film such as barrier metal constituting the semiconductor chips is formed so as to cover a surface of the corrugated groove. A film stress of the metal film is dispersed in multiple directions. It is thereby possible to obtain a semiconductor chip mounting wafer capable of ensuring relaxing wafer warping and suppressing an electrostatic chuck error.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_applications_20030160303
source USPTO Published Applications
title Semiconductor chip mounting wafer
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T16%3A12%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFI&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Hirokawa,%20Taichi&rft.date=2003-08-28&rft_id=info:doi/&rft_dat=%3Cuspatents_EFI%3E20030160303%3C/uspatents_EFI%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true