Method and device for forming an STI type isolation in a semiconductor device

Method and device for forming an STI type isolation in a semiconductor device

A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying hea...

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Hauptverfasser: Kim, Chul-Sung, Choi, Si-Young, Park, Jung-Woo, Ryu, Jong-Ryol, Lee, Byeong-Chan
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Sprache:eng
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creator Kim, Chul-Sung
Choi, Si-Young
Park, Jung-Woo
Ryu, Jong-Ryol
Lee, Byeong-Chan
description A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.
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title Method and device for forming an STI type isolation in a semiconductor device
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