Fabrication of devices for a mesh network within a semiconductor structure

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart fro...

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Bibliographische Detailangaben
Hauptverfasser: Brophy, Timothy, Barenburg, Barbara
Format: Patent
Sprache:eng
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