Method for forming heavy nitrogen-doped ultra thin oxynitride gate dielectrics
A method for forming an ultra thin gate dielectric for an integrated circuit device is disclosed. In an exemplary embodiment of the invention, the method includes forming an initial nitride layer upon a substrate by rapidly heating the substrate in the presence of an ammonia (NH 3 ) gas, and then re...
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| Format: | Patent |
| Sprache: | eng |
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