Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same

Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same

In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation l...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Taketomi, Yoshinao, Kuramasu, Keizaburo, Izuchi, Masumi, Satani, Hiroshi, Tsutsu, Hiroshi, Nishitani, Hikaru, Nishitani, Mikihiko, Goto, Masashi, Mino, Yoshiko
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Taketomi, Yoshinao
Kuramasu, Keizaburo
Izuchi, Masumi
Satani, Hiroshi
Tsutsu, Hiroshi
Nishitani, Hikaru
Nishitani, Mikihiko
Goto, Masashi
Mino, Yoshiko
description In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203. is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.
format Patent
fullrecord <record><control><sourceid>uspatents_EFI</sourceid><recordid>TN_cdi_uspatents_applications_20030022471</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20030022471</sourcerecordid><originalsourceid>FETCH-uspatents_applications_200300224713</originalsourceid><addsrcrecordid>eNqVzb8KwkAMBvBbHER9h1uFCudV6AOI4q57CdecDfT-0KSuvrpH6SK4OIQM-X1f1up9x0AuxW5ykkYtPUXtaQiVDih96jTEMjnDCDKx9sXkMRVN8Vk0aoaA1az4q6nDFzmcD0tT8j-iW7XyMDDulr1R--vlcb4dJs4gGIXb8n0gB0IpcmuNqY2x9tQc63_sB-9CT40</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same</title><source>USPTO Published Applications</source><creator>Taketomi, Yoshinao ; Kuramasu, Keizaburo ; Izuchi, Masumi ; Satani, Hiroshi ; Tsutsu, Hiroshi ; Nishitani, Hikaru ; Nishitani, Mikihiko ; Goto, Masashi ; Mino, Yoshiko</creator><creatorcontrib>Taketomi, Yoshinao ; Kuramasu, Keizaburo ; Izuchi, Masumi ; Satani, Hiroshi ; Tsutsu, Hiroshi ; Nishitani, Hikaru ; Nishitani, Mikihiko ; Goto, Masashi ; Mino, Yoshiko</creatorcontrib><description>In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203. is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030022471$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,869,881,64035</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/10218310$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Taketomi, Yoshinao</creatorcontrib><creatorcontrib>Kuramasu, Keizaburo</creatorcontrib><creatorcontrib>Izuchi, Masumi</creatorcontrib><creatorcontrib>Satani, Hiroshi</creatorcontrib><creatorcontrib>Tsutsu, Hiroshi</creatorcontrib><creatorcontrib>Nishitani, Hikaru</creatorcontrib><creatorcontrib>Nishitani, Mikihiko</creatorcontrib><creatorcontrib>Goto, Masashi</creatorcontrib><creatorcontrib>Mino, Yoshiko</creatorcontrib><title>Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same</title><description>In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203. is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFI</sourceid><recordid>eNqVzb8KwkAMBvBbHER9h1uFCudV6AOI4q57CdecDfT-0KSuvrpH6SK4OIQM-X1f1up9x0AuxW5ykkYtPUXtaQiVDih96jTEMjnDCDKx9sXkMRVN8Vk0aoaA1az4q6nDFzmcD0tT8j-iW7XyMDDulr1R--vlcb4dJs4gGIXb8n0gB0IpcmuNqY2x9tQc63_sB-9CT40</recordid><startdate>20030130</startdate><enddate>20030130</enddate><creator>Taketomi, Yoshinao</creator><creator>Kuramasu, Keizaburo</creator><creator>Izuchi, Masumi</creator><creator>Satani, Hiroshi</creator><creator>Tsutsu, Hiroshi</creator><creator>Nishitani, Hikaru</creator><creator>Nishitani, Mikihiko</creator><creator>Goto, Masashi</creator><creator>Mino, Yoshiko</creator><scope>EFI</scope></search><sort><creationdate>20030130</creationdate><title>Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same</title><author>Taketomi, Yoshinao ; Kuramasu, Keizaburo ; Izuchi, Masumi ; Satani, Hiroshi ; Tsutsu, Hiroshi ; Nishitani, Hikaru ; Nishitani, Mikihiko ; Goto, Masashi ; Mino, Yoshiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_applications_200300224713</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Taketomi, Yoshinao</creatorcontrib><creatorcontrib>Kuramasu, Keizaburo</creatorcontrib><creatorcontrib>Izuchi, Masumi</creatorcontrib><creatorcontrib>Satani, Hiroshi</creatorcontrib><creatorcontrib>Tsutsu, Hiroshi</creatorcontrib><creatorcontrib>Nishitani, Hikaru</creatorcontrib><creatorcontrib>Nishitani, Mikihiko</creatorcontrib><creatorcontrib>Goto, Masashi</creatorcontrib><creatorcontrib>Mino, Yoshiko</creatorcontrib><collection>USPTO Published Applications</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Taketomi, Yoshinao</au><au>Kuramasu, Keizaburo</au><au>Izuchi, Masumi</au><au>Satani, Hiroshi</au><au>Tsutsu, Hiroshi</au><au>Nishitani, Hikaru</au><au>Nishitani, Mikihiko</au><au>Goto, Masashi</au><au>Mino, Yoshiko</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same</title><date>2003-01-30</date><risdate>2003</risdate><abstract>In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203. is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_applications_20030022471
source USPTO Published Applications
title Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T21%3A03%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFI&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Taketomi,%20Yoshinao&rft.date=2003-01-30&rft_id=info:doi/&rft_dat=%3Cuspatents_EFI%3E20030022471%3C/uspatents_EFI%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true