MOS field effect transistor structure and method of manufacture

A method of manufacturing a metal-oxide-semiconductor field effect (MOSFET) device. A substrate having an isolating structure thereon is provided. A gate dielectric layer and a conductive layer are sequentially formed over the substrate. The conductive layer and the gate dielectric layer are pattern...

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Bibliographische Detailangaben

Hauptverfasser:	Cheng, Shui-Ming, Cheng, Yao-Chin, Huang, Yu-Shyang, Liu, Chih-Chien
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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