Power mosfet semiconductor device and method of manufacturing the same

A semiconductor device includes a semiconductor substrate of a first conductivity type, on which a semiconductor layer having a trench extending in the depth direction toward the semiconductor substrate is formed. A first region of the first conductivity type is formed in the depth direction along o...

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Bibliographische Detailangaben

Hauptverfasser:	Kouzuki, Shigeo, Izumisawa, Masaru, Hodama, Shinichi
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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