DOPED SILICON DEPOSITION PROCESS IN RESISTIVELY HEATED SINGLE WAFER CHAMBER

A method for depositing doped polycrystalline or amorphous silicon film. The method includes placing a substrate onto a susceptor. The susceptor includes a body having a resistive heater therein and a thermocouple in physical contact with the resistive heater. The susceptor is located in the process...

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Hauptverfasser:	Wang, Shulin, Luo, Lee, Chen, Steven, Sanchez, Errol, Tao, Xianzhi, Dragojlovic, Zoran, Fu, Li
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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