LIGHT EMITTING DIODES WITH SPREADING AND IMPROVING LIGHT EMITTING AREA
The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Yih, Nae-Guann Wu, Bor-Jen Chen, Chien-An Chen, Nai-Chuan |
| description | The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape. The second contact structure with the third shape is corresponded to both the transparent contact with the second shape and the first contact structure with the first shape whereby a relationship provides a plurality of current paths with substantially equal distances between the first contact structure and the second contact structure. |
| format | Patent |
| fullrecord | <record><control><sourceid>uspatents_EFI</sourceid><recordid>TN_cdi_uspatents_applications_20020130327</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20020130327</sourcerecordid><originalsourceid>FETCH-uspatents_applications_200201303273</originalsourceid><addsrcrecordid>eNrjZHDz8XT3CFFw9fUMCfH0c1dw8fR3cQ1WCPcM8VAIDghydXQBiTr6uSh4-gYE-YeBeGhaHIGqeBhY0xJzilN5oTQ3g6aba4izh25pcUFiSWpeSXF8YkFBTmZyYklmfl5xvJGBgZGBobGBsZG5MSlqAQdhMy8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LIGHT EMITTING DIODES WITH SPREADING AND IMPROVING LIGHT EMITTING AREA</title><source>USPTO Published Applications</source><creator>Yih, Nae-Guann ; Wu, Bor-Jen ; Chen, Chien-An ; Chen, Nai-Chuan</creator><creatorcontrib>Yih, Nae-Guann ; Wu, Bor-Jen ; Chen, Chien-An ; Chen, Nai-Chuan</creatorcontrib><description>The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape. The second contact structure with the third shape is corresponded to both the transparent contact with the second shape and the first contact structure with the first shape whereby a relationship provides a plurality of current paths with substantially equal distances between the first contact structure and the second contact structure.</description><language>eng</language><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20020130327$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,869,881,64032</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/09811688$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Yih, Nae-Guann</creatorcontrib><creatorcontrib>Wu, Bor-Jen</creatorcontrib><creatorcontrib>Chen, Chien-An</creatorcontrib><creatorcontrib>Chen, Nai-Chuan</creatorcontrib><title>LIGHT EMITTING DIODES WITH SPREADING AND IMPROVING LIGHT EMITTING AREA</title><description>The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape. The second contact structure with the third shape is corresponded to both the transparent contact with the second shape and the first contact structure with the first shape whereby a relationship provides a plurality of current paths with substantially equal distances between the first contact structure and the second contact structure.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EFI</sourceid><recordid>eNrjZHDz8XT3CFFw9fUMCfH0c1dw8fR3cQ1WCPcM8VAIDghydXQBiTr6uSh4-gYE-YeBeGhaHIGqeBhY0xJzilN5oTQ3g6aba4izh25pcUFiSWpeSXF8YkFBTmZyYklmfl5xvJGBgZGBobGBsZG5MSlqAQdhMy8</recordid><startdate>20020919</startdate><enddate>20020919</enddate><creator>Yih, Nae-Guann</creator><creator>Wu, Bor-Jen</creator><creator>Chen, Chien-An</creator><creator>Chen, Nai-Chuan</creator><scope>EFI</scope></search><sort><creationdate>20020919</creationdate><title>LIGHT EMITTING DIODES WITH SPREADING AND IMPROVING LIGHT EMITTING AREA</title><author>Yih, Nae-Guann ; Wu, Bor-Jen ; Chen, Chien-An ; Chen, Nai-Chuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_applications_200201303273</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Yih, Nae-Guann</creatorcontrib><creatorcontrib>Wu, Bor-Jen</creatorcontrib><creatorcontrib>Chen, Chien-An</creatorcontrib><creatorcontrib>Chen, Nai-Chuan</creatorcontrib><collection>USPTO Published Applications</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yih, Nae-Guann</au><au>Wu, Bor-Jen</au><au>Chen, Chien-An</au><au>Chen, Nai-Chuan</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIGHT EMITTING DIODES WITH SPREADING AND IMPROVING LIGHT EMITTING AREA</title><date>2002-09-19</date><risdate>2002</risdate><abstract>The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape. The second contact structure with the third shape is corresponded to both the transparent contact with the second shape and the first contact structure with the first shape whereby a relationship provides a plurality of current paths with substantially equal distances between the first contact structure and the second contact structure.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_uspatents_applications_20020130327 |
| source | USPTO Published Applications |
| title | LIGHT EMITTING DIODES WITH SPREADING AND IMPROVING LIGHT EMITTING AREA |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T16%3A12%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFI&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Yih,%20Nae-Guann&rft.date=2002-09-19&rft_id=info:doi/&rft_dat=%3Cuspatents_EFI%3E20020130327%3C/uspatents_EFI%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |