Method in etching of a substrate
In etching, an etchant ( 4 ) for etching of a substrate ( 1 ) is applied in a given pattern. Before etching, a resist layer ( 2 ) is applied to the substrate ( 1 ) in said pattern to define at least one exposed portion ( 3 ) of the substrate ( 1 ). In order to minimize under etching, a passivating s...
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| creator | Bjarnason, Bjarni Petersson, Per |
| description | In etching, an etchant (
4
) for etching of a substrate (
1
) is applied in a given pattern. Before etching, a resist layer (
2
) is applied to the substrate (
1
) in said pattern to define at least one exposed portion (
3
) of the substrate (
1
). In order to minimize under etching, a passivating substance is arranged, before etching, on the substrate (
1
) to also define said pattern, i.e. at the periphery of the exposed portion (
3
). The passivating substance is such as to form, during etching, an etch-protecting compound at the periphery. |
| format | Patent |
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4
) for etching of a substrate (
1
) is applied in a given pattern. Before etching, a resist layer (
2
) is applied to the substrate (
1
) in said pattern to define at least one exposed portion (
3
) of the substrate (
1
). In order to minimize under etching, a passivating substance is arranged, before etching, on the substrate (
1
) to also define said pattern, i.e. at the periphery of the exposed portion (
3
). The passivating substance is such as to form, during etching, an etch-protecting compound at the periphery.</description><language>eng</language><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20020042198$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,873,885,64059</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/09956082$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Bjarnason, Bjarni</creatorcontrib><creatorcontrib>Petersson, Per</creatorcontrib><title>Method in etching of a substrate</title><description>In etching, an etchant (
4
) for etching of a substrate (
1
) is applied in a given pattern. Before etching, a resist layer (
2
) is applied to the substrate (
1
) in said pattern to define at least one exposed portion (
3
) of the substrate (
1
). In order to minimize under etching, a passivating substance is arranged, before etching, on the substrate (
1
) to also define said pattern, i.e. at the periphery of the exposed portion (
3
). The passivating substance is such as to form, during etching, an etch-protecting compound at the periphery.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EFI</sourceid><recordid>eNrjZFDwTS3JyE9RyMxTSC1JzsjMS1fIT1NIVCguTSouKUosSeVhYE1LzClO5YXS3Ayabq4hzh66pcUFQOm8kuL4xIKCnMzkxJLM_LzieCMDAyAyMTK0tDAmRS0AEJYr3A</recordid><startdate>20020411</startdate><enddate>20020411</enddate><creator>Bjarnason, Bjarni</creator><creator>Petersson, Per</creator><scope>EFI</scope></search><sort><creationdate>20020411</creationdate><title>Method in etching of a substrate</title><author>Bjarnason, Bjarni ; Petersson, Per</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_applications_200200421983</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Bjarnason, Bjarni</creatorcontrib><creatorcontrib>Petersson, Per</creatorcontrib><collection>USPTO Published Applications</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bjarnason, Bjarni</au><au>Petersson, Per</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method in etching of a substrate</title><date>2002-04-11</date><risdate>2002</risdate><abstract>In etching, an etchant (
4
) for etching of a substrate (
1
) is applied in a given pattern. Before etching, a resist layer (
2
) is applied to the substrate (
1
) in said pattern to define at least one exposed portion (
3
) of the substrate (
1
). In order to minimize under etching, a passivating substance is arranged, before etching, on the substrate (
1
) to also define said pattern, i.e. at the periphery of the exposed portion (
3
). The passivating substance is such as to form, during etching, an etch-protecting compound at the periphery.</abstract><oa>free_for_read</oa></addata></record> |
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| source | USPTO Published Applications |
| title | Method in etching of a substrate |
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