Semiconductor pressure sensor having strain gauge and circuit portion on semiconductor substrate

A semiconductor pressure sensor includes a SOI substrate composed of first and second silicon substrates. A diaphragm portion is formed by the first silicon substrate as a bottom of a recess portion formed in the second silicon substrate. Strain gauges are formed on the diaphragm portion, and a circ...

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Hauptverfasser:	Toyoda, Inao, Ishio, Seiichiro, Hamamoto, Kazuaki, Suzuki, Yasutoshi
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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