METHOD FOR PROVIDING IMPROVED STEP COVERAGE OF DEEP TRENCHES AND USE THEREOF
Disclosed is a method for providing improved step coverage of deep trenches. A hard mask which constitutes a bottom silicon oxide layer and a top silicon nitride layer is formed on a substrate and patterned to form a opening. A deep trench extending into the substrate is formed through the opening....
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!