METHOD FOR FORMING METAL NITRIDE FILM

A method for forming a titanium nitride film of an excellent quality on a semiconductor substrate at a low temperature is achieved. With a heated semiconductor substrate on a susceptor held at a temperature of about 500° C., titanium tetrachloride and ammonia are introduced into a reactor to carry out the deposition of the titanium nitride film. After the deposition is completed, the semiconductor substrate within the reactor is continuously held at a temperature of 500° C. After a low pressure mercury lamp is turned on, while the inner part of the reactor is irradiated with ultraviolet rays with a wavelength of 170-280 nm emitted from the lamp, an ammonia gas is introduced, with the flow rate adjusted to about 1000 sccm, into the reactor held at a pressure of about 10 Torr to carry out annealing in an ammonia atmosphere for about 60 seconds.