Method of manufacturing a transistor
A method of manufacturing a TFT ( 10 ) is disclosed comprising source ( 8 ) and drain ( 8 ″) electrodes joined by a semiconductor channel ( 6 ) formed from a semiconductor layer ( 4 ), a gate insulating layer ( 7 ) and a gate electrode ( 8 ′). The method comprising the steps of applying a foil ( 2 )...
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| Hauptverfasser: | , |
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| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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