Method of manufacturing a semiconductor capacitor having a hemispherical grain layer using a dry cleaning process

A method of manufacturing a semiconductor device having a hemispherical grain (HSG) layer employs a dry cleaning process. A polysilicon layer is formed on a specific material layer on a semiconductor substrate. Next, a polysilicon pattern, at least a portion of which is exposed, is formed by etching...

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Bibliographische Detailangaben

Hauptverfasser:	Chang, Kyu-hwan, Chung, Seung-pil, Kwon, Young-min, Hah, Sang-lock
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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