Method and apparatus for manufacturing semiconductor device

A method and apparatus for manufacturing a semiconductor device can achieve the formation of thin films in a uniform thickness on a substrate. The method and apparatus includes a film-forming process in which film-forming gases 14, 15 are caused to flow over a surface of a substrate 11 substantially...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Matsuyama, Naoko, Sasaki, Sinya
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Matsuyama, Naoko
Sasaki, Sinya
description A method and apparatus for manufacturing a semiconductor device can achieve the formation of thin films in a uniform thickness on a substrate. The method and apparatus includes a film-forming process in which film-forming gases 14, 15 are caused to flow over a surface of a substrate 11 substantially in parallel therewith to form thin films on the substrate surface. The film-forming process includes an initial film-forming step for forming a first thin film on the surface of the substrate 11 under a first film-forming conditions and a main film-forming step for forming, on the first thin film acting as a backing layer, a second thin film of a thickness greater than that of the first thin film under a second film-forming condition which differs from the first film-forming condition.
format Patent
fullrecord <record><control><sourceid>uspatents_EFI</sourceid><recordid>TN_cdi_uspatents_applications_20010008782</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20010008782</sourcerecordid><originalsourceid>FETCH-uspatents_applications_200100087823</originalsourceid><addsrcrecordid>eNrjZLD2TS3JyE9RSMwD4oKCxKLEktJihbT8IoXcxLzStMTkktKizLx0heLU3Mzk_LyU0uQSoFxKallmcioPA2taYk5xKi-U5mbQdHMNcfbQLS0uSCxJzSspjgcamZOZnFiSmZ9XHG9kYGBoYGBgYW5hZEyKWgCByzb5</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and apparatus for manufacturing semiconductor device</title><source>USPTO Published Applications</source><creator>Matsuyama, Naoko ; Sasaki, Sinya</creator><creatorcontrib>Matsuyama, Naoko ; Sasaki, Sinya</creatorcontrib><description>A method and apparatus for manufacturing a semiconductor device can achieve the formation of thin films in a uniform thickness on a substrate. The method and apparatus includes a film-forming process in which film-forming gases 14, 15 are caused to flow over a surface of a substrate 11 substantially in parallel therewith to form thin films on the substrate surface. The film-forming process includes an initial film-forming step for forming a first thin film on the surface of the substrate 11 under a first film-forming conditions and a main film-forming step for forming, on the first thin film acting as a backing layer, a second thin film of a thickness greater than that of the first thin film under a second film-forming condition which differs from the first film-forming condition.</description><language>eng</language><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20010008782$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,869,881,64035</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/09758238$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Matsuyama, Naoko</creatorcontrib><creatorcontrib>Sasaki, Sinya</creatorcontrib><title>Method and apparatus for manufacturing semiconductor device</title><description>A method and apparatus for manufacturing a semiconductor device can achieve the formation of thin films in a uniform thickness on a substrate. The method and apparatus includes a film-forming process in which film-forming gases 14, 15 are caused to flow over a surface of a substrate 11 substantially in parallel therewith to form thin films on the substrate surface. The film-forming process includes an initial film-forming step for forming a first thin film on the surface of the substrate 11 under a first film-forming conditions and a main film-forming step for forming, on the first thin film acting as a backing layer, a second thin film of a thickness greater than that of the first thin film under a second film-forming condition which differs from the first film-forming condition.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EFI</sourceid><recordid>eNrjZLD2TS3JyE9RSMwD4oKCxKLEktJihbT8IoXcxLzStMTkktKizLx0heLU3Mzk_LyU0uQSoFxKallmcioPA2taYk5xKi-U5mbQdHMNcfbQLS0uSCxJzSspjgcamZOZnFiSmZ9XHG9kYGBoYGBgYW5hZEyKWgCByzb5</recordid><startdate>20010719</startdate><enddate>20010719</enddate><creator>Matsuyama, Naoko</creator><creator>Sasaki, Sinya</creator><scope>EFI</scope></search><sort><creationdate>20010719</creationdate><title>Method and apparatus for manufacturing semiconductor device</title><author>Matsuyama, Naoko ; Sasaki, Sinya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_applications_200100087823</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Matsuyama, Naoko</creatorcontrib><creatorcontrib>Sasaki, Sinya</creatorcontrib><collection>USPTO Published Applications</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Matsuyama, Naoko</au><au>Sasaki, Sinya</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for manufacturing semiconductor device</title><date>2001-07-19</date><risdate>2001</risdate><abstract>A method and apparatus for manufacturing a semiconductor device can achieve the formation of thin films in a uniform thickness on a substrate. The method and apparatus includes a film-forming process in which film-forming gases 14, 15 are caused to flow over a surface of a substrate 11 substantially in parallel therewith to form thin films on the substrate surface. The film-forming process includes an initial film-forming step for forming a first thin film on the surface of the substrate 11 under a first film-forming conditions and a main film-forming step for forming, on the first thin film acting as a backing layer, a second thin film of a thickness greater than that of the first thin film under a second film-forming condition which differs from the first film-forming condition.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_applications_20010008782
source USPTO Published Applications
title Method and apparatus for manufacturing semiconductor device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T18%3A43%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFI&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Matsuyama,%20Naoko&rft.date=2001-07-19&rft_id=info:doi/&rft_dat=%3Cuspatents_EFI%3E20010008782%3C/uspatents_EFI%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true