Properties of MOS capacitors produced on SiGe formed by Ge-implanted Si

Metal-oxide-semiconductor (MOS) capacitors fabricated on Ge-implanted Si have been investigated by using C-V and G-V measurements. The control sample on pure Si substrate yielded normal C-V and G-V characteristics. The Ge-implanted MOS samples exhibited anomalous C-V and G-V behavior. The C-V curves...

Ausführliche Beschreibung