The Effect of Argon Ion Irradiation Parameters on the Photoluminescence Spectrum of Porous Silicon

In this paper, the irradiation of porous silicon with Ar ions with the energies of 100 and 200 keV and fluences from cm up to cm has been performed and studied. The effect of ion irradiation at different fluences and energies of incident particles on the photoluminescence spectrum of porous silicon has been analyzed. It has been shown that ion irradiation leads to a shift of the photoluminescence maximum, which grows with increasing energy. An increase in the fluence reduces the photoluminescence intensity, but, at the same time, has no effect on the magnitude of the maximum shift. The main mechanisms of the photoluminescence in porous silicon are also discussed.