Kinetics of surface pyrolysis of a silane–germane gas mixture under conditions of epitaxial film deposition of Si1–xGex solid solutions

Specific features of the pyrolysis of hydride molecules on the surface of a Si 1– x Ge x film under conditions of epitaxial film deposition of a mixture of silicon and germanium hydrides have been studied. Temperature dependences of the kinetic coefficients responsible for the rate of hydrogen desorption from the Si 1– x Ge x film surface and the rate of dissociation of gas molecule radicals adsorbed by the surface of the growing film have been obtained for the first time, using the developed kinetic models of surface pyrolysis and the results of engineering experiments in the temperature range 450–800°C. A correlation between the dissociation frequencies of silane and germane molecules, as well as a correlation of the dissociation frequencies with other kinetic parameters of the system were revealed.