The influence of the magnetic field on the effect of drag of electrons by phonons in n-CdxHg1 − xTe
Thermopower in n -Cd 0.2 Hg 0.8 Te (6–100 K) is studied. A large effect of drag of the charge carriers by phonons α ph is found. The influence of the magnetic field H on the drag thermopower is considered. It is established that the magnetic field exerts the effect mainly on the electron component o...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2009, Vol.43 (9), p.1142-1145 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Aliyev, S. A. Zulfigarov, E. I. Selim-Zade, R. I. Agayev, Z. F. |
| description | Thermopower in
n
-Cd
0.2
Hg
0.8
Te (6–100 K) is studied. A large effect of drag of the charge carriers by phonons α
ph
is found. The influence of the magnetic field
H
on the drag thermopower is considered. It is established that the magnetic field exerts the effect mainly on the electron component of α
ph
. The data are interpreted in the context of the theory taking into account the effect of
H
on thermopower α
ph
, in which parameter
A
(ɛ) proportional to the static force of the drag effect is introduced. By the experimental data α
ph
(
T
,
H
),
T
, and
H
dependences
A
(ɛ) are determined. It is shown that, as
H
increases,
A
(ɛ) sharply decreases. This explains a decrease in α
ph
in the magnetic field, power index
k
in dependence α
ph
∝
T
−κ
, and narrowing the region of manifestation of the drag effect. It is established that at classically high fields, the drag effect in
n
-Cd
0.2
Hg
0.8
Te does not vanish. |
| doi_str_mv | 10.1134/S1063782609090073 |
| format | Article |
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n
-Cd
0.2
Hg
0.8
Te (6–100 K) is studied. A large effect of drag of the charge carriers by phonons α
ph
is found. The influence of the magnetic field
H
on the drag thermopower is considered. It is established that the magnetic field exerts the effect mainly on the electron component of α
ph
. The data are interpreted in the context of the theory taking into account the effect of
H
on thermopower α
ph
, in which parameter
A
(ɛ) proportional to the static force of the drag effect is introduced. By the experimental data α
ph
(
T
,
H
),
T
, and
H
dependences
A
(ɛ) are determined. It is shown that, as
H
increases,
A
(ɛ) sharply decreases. This explains a decrease in α
ph
in the magnetic field, power index
k
in dependence α
ph
∝
T
−κ
, and narrowing the region of manifestation of the drag effect. It is established that at classically high fields, the drag effect in
n
-Cd
0.2
Hg
0.8
Te does not vanish.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782609090073</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Electronic and Optical Properties of Semiconductors ; Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2009, Vol.43 (9), p.1142-1145</ispartof><rights>Pleiades Publishing, Ltd. 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782609090073$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782609090073$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Aliyev, S. A.</creatorcontrib><creatorcontrib>Zulfigarov, E. I.</creatorcontrib><creatorcontrib>Selim-Zade, R. I.</creatorcontrib><creatorcontrib>Agayev, Z. F.</creatorcontrib><title>The influence of the magnetic field on the effect of drag of electrons by phonons in n-CdxHg1 − xTe</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Thermopower in
n
-Cd
0.2
Hg
0.8
Te (6–100 K) is studied. A large effect of drag of the charge carriers by phonons α
ph
is found. The influence of the magnetic field
H
on the drag thermopower is considered. It is established that the magnetic field exerts the effect mainly on the electron component of α
ph
. The data are interpreted in the context of the theory taking into account the effect of
H
on thermopower α
ph
, in which parameter
A
(ɛ) proportional to the static force of the drag effect is introduced. By the experimental data α
ph
(
T
,
H
),
T
, and
H
dependences
A
(ɛ) are determined. It is shown that, as
H
increases,
A
(ɛ) sharply decreases. This explains a decrease in α
ph
in the magnetic field, power index
k
in dependence α
ph
∝
T
−κ
, and narrowing the region of manifestation of the drag effect. It is established that at classically high fields, the drag effect in
n
-Cd
0.2
Hg
0.8
Te does not vanish.</description><subject>Electronic and Optical Properties of Semiconductors</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqdj0FuwjAQRa2KSoWWA3Q3F0jriUMCa0TFnuyjNBknjtIxsoNEb9A1R-xJaiN27KpZ_K_3_yy-EK8o3xBV9n5AmatineZyE04W6kHMMbgkz4rNLPpcJTF_EgvvBykR16tsLqjsCQzr8UTcEFgNUwBfdcc0mQa0obEFy1dKWlMzxU7r6i4qjQE4yx4-v-HYW47WMHCybc_7DuH35wLnkl7Eo65HT8ubPov0Y1du94k_OsMduWqwJ8chqlBWcVB1N0j96-kPOpNTGg</recordid><startdate>2009</startdate><enddate>2009</enddate><creator>Aliyev, S. A.</creator><creator>Zulfigarov, E. I.</creator><creator>Selim-Zade, R. I.</creator><creator>Agayev, Z. F.</creator><general>SP MAIK Nauka/Interperiodica</general><scope/></search><sort><creationdate>2009</creationdate><title>The influence of the magnetic field on the effect of drag of electrons by phonons in n-CdxHg1 − xTe</title><author>Aliyev, S. A. ; Zulfigarov, E. I. ; Selim-Zade, R. I. ; Agayev, Z. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-springer_journals_10_1134_S10637826090900733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Electronic and Optical Properties of Semiconductors</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aliyev, S. A.</creatorcontrib><creatorcontrib>Zulfigarov, E. I.</creatorcontrib><creatorcontrib>Selim-Zade, R. I.</creatorcontrib><creatorcontrib>Agayev, Z. F.</creatorcontrib><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aliyev, S. A.</au><au>Zulfigarov, E. I.</au><au>Selim-Zade, R. I.</au><au>Agayev, Z. F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The influence of the magnetic field on the effect of drag of electrons by phonons in n-CdxHg1 − xTe</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2009</date><risdate>2009</risdate><volume>43</volume><issue>9</issue><spage>1142</spage><epage>1145</epage><pages>1142-1145</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Thermopower in
n
-Cd
0.2
Hg
0.8
Te (6–100 K) is studied. A large effect of drag of the charge carriers by phonons α
ph
is found. The influence of the magnetic field
H
on the drag thermopower is considered. It is established that the magnetic field exerts the effect mainly on the electron component of α
ph
. The data are interpreted in the context of the theory taking into account the effect of
H
on thermopower α
ph
, in which parameter
A
(ɛ) proportional to the static force of the drag effect is introduced. By the experimental data α
ph
(
T
,
H
),
T
, and
H
dependences
A
(ɛ) are determined. It is shown that, as
H
increases,
A
(ɛ) sharply decreases. This explains a decrease in α
ph
in the magnetic field, power index
k
in dependence α
ph
∝
T
−κ
, and narrowing the region of manifestation of the drag effect. It is established that at classically high fields, the drag effect in
n
-Cd
0.2
Hg
0.8
Te does not vanish.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063782609090073</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2009, Vol.43 (9), p.1142-1145 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_springer_journals_10_1134_S1063782609090073 |
| source | SpringerNature Journals |
| subjects | Electronic and Optical Properties of Semiconductors Magnetic Materials Magnetism Physics Physics and Astronomy |
| title | The influence of the magnetic field on the effect of drag of electrons by phonons in n-CdxHg1 − xTe |
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