The fractional quantum hall effect
The Fractional Quantum Hall Effect (FQHE) represents a very surprising recent discovery in solid state physics. It is observed in high-mobility, two-dimensional electron systems at low temperatures (≈1 K) in intense perpendicular magnetic fields (≈200 kG) when all carriers are confined to the lowest...
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description | The Fractional Quantum Hall Effect (FQHE) represents a very surprising recent discovery in solid state physics. It is observed in high-mobility, two-dimensional electron systems at low temperatures (≈1 K) in intense perpendicular magnetic fields (≈200 kG) when all carriers are confined to the lowest Landau level. Under those exceptional conditions, and at fractional filling ν of this level, the Hall resistance is found to be quantized to ρxy = h/ie2, where i is a simple rational fraction. Concomitantly, the resistivity ρxx drops towards zero. So far this effect has been observed close to ν=1/3, 2/3, 4/3, 5/3, 2/5, 3/5, 4/5, and 2/7 with quantum numbers i=ν quantized, in some cases, to better than 1 part in 104. The FQHE represents the unambiguous, experimental observation of a fractional quantum number. It is presently being explained as resulting from the formation of a novel incompressible quantum liquid with fractionally charged quasi-particles, and a finite gap separating the ground state from its excitations. |
doi_str_mv | 10.1007/BFb0107444 |
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It is observed in high-mobility, two-dimensional electron systems at low temperatures (≈1 K) in intense perpendicular magnetic fields (≈200 kG) when all carriers are confined to the lowest Landau level. Under those exceptional conditions, and at fractional filling ν of this level, the Hall resistance is found to be quantized to ρxy = h/ie2, where i is a simple rational fraction. Concomitantly, the resistivity ρxx drops towards zero. So far this effect has been observed close to ν=1/3, 2/3, 4/3, 5/3, 2/5, 3/5, 4/5, and 2/7 with quantum numbers i=ν quantized, in some cases, to better than 1 part in 104. The FQHE represents the unambiguous, experimental observation of a fractional quantum number. 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It is observed in high-mobility, two-dimensional electron systems at low temperatures (≈1 K) in intense perpendicular magnetic fields (≈200 kG) when all carriers are confined to the lowest Landau level. Under those exceptional conditions, and at fractional filling ν of this level, the Hall resistance is found to be quantized to ρxy = h/ie2, where i is a simple rational fraction. Concomitantly, the resistivity ρxx drops towards zero. So far this effect has been observed close to ν=1/3, 2/3, 4/3, 5/3, 2/5, 3/5, 4/5, and 2/7 with quantum numbers i=ν quantized, in some cases, to better than 1 part in 104. The FQHE represents the unambiguous, experimental observation of a fractional quantum number. 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It is observed in high-mobility, two-dimensional electron systems at low temperatures (≈1 K) in intense perpendicular magnetic fields (≈200 kG) when all carriers are confined to the lowest Landau level. Under those exceptional conditions, and at fractional filling ν of this level, the Hall resistance is found to be quantized to ρxy = h/ie2, where i is a simple rational fraction. Concomitantly, the resistivity ρxx drops towards zero. So far this effect has been observed close to ν=1/3, 2/3, 4/3, 5/3, 2/5, 3/5, 4/5, and 2/7 with quantum numbers i=ν quantized, in some cases, to better than 1 part in 104. The FQHE represents the unambiguous, experimental observation of a fractional quantum number. It is presently being explained as resulting from the formation of a novel incompressible quantum liquid with fractionally charged quasi-particles, and a finite gap separating the ground state from its excitations.</abstract><cop>Berlin, Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/BFb0107444</doi></addata></record> |
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title | The fractional quantum hall effect |
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