Growth of high-quality ruthenium films on sapphire

We have developed and optimized a method to grow ruthenium films of unprecedented quality. Our three-step process is reminiscent of solid-phase epitaxy. First, c-cut sapphire substrates are terminated at their Al-rich √31 × √31R ± 9° reconstruction by in situ annealing. Second, 3D structured epitaxi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2024-09, Vol.42 (5)
Hauptverfasser:	Majer, Lena N., Smink, Sander, Braun, Wolfgang, Wang, Hongguang, van Aken, Peter A., Mannhart, Jochen, Hensling, Felix V. E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!