Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys

Nickel and aluminum ohmic contacts were formed on p-doped GeC and GeCSn epitaxial films with ∼1%C. When a 40 nm p-GeC contact layer was added to p-Ge, annealed contact resistivity (Rc) dropped by 87% to 9.3 × 10−7 Ω cm2 for Al but increased by 32% to 2.9 × 10−5 Ω cm2 for Ni. On the other hand, thick...

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Veröffentlicht in:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2024-12, Vol.42 (6)
Hauptverfasser:	Saha, Jibesh K., Taqy, Saif A. A., Sarkar, Pallab K., Rahaman, Imteaz, Arbogast, Augustus W., Dey, Tuhin, Dolocan, Andrei, Reaz Rahman Munna, Md, Alam, Khorshed, Wasserman, Daniel, Bank, Seth R., Wistey, Mark A.
Format:	Artikel
Sprache:	eng
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