Emission enhancement of GaN field emitter arrays in an N2 environment

Field emitter arrays (FEAs) have the potential to operate at high frequencies and in harsh environments. However, the vacuum packaging of these devices poses a challenge due to the sensitivity of the emission phenomena to the surface properties of the cathode. Studying the effect of different residu...

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Veröffentlicht in:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2024-07, Vol.42 (4)
Hauptverfasser:	Farsad Asadi, Reza, Zheng, Tao, Shih, Pao-Chuan, Palacios, Tomás, Akinwande, Akintunde I., Gnade, Bruce
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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