Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies

Germanium channel FinFET transistors process integration on a silicon substrate is a promising candidate to extend the complementary metal–oxide–semiconductor semiconductor roadmap. This process has utilized the legacy of state-of-art silicon fabrication process technology and can be an immediate so...

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Veröffentlicht in:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2023-09, Vol.41 (5)
Hauptverfasser:	Choudhary, Sumit, Yogesh, Midathala, Schwarz, Daniel, Funk, Hannes S., Ghosh, Subrata, Sharma, Satinder K., Schulze, Jörg, Gonsalves, Kenneth E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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