Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium

Atomic layer etching driven by self-limiting thermal reactions has recently been developed as a highly conformal and isotropic technique for low damage atomic scale material removal by sequential exposures of vapor phase reactants. Gallium oxide (Ga2O3) is currently among the materials of interest d...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2022-07, Vol.40 (4)
Hauptverfasser:	Hatch, Kevin A., Messina, Daniel C., Nemanich, Robert J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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