Fundamental study on the selective etching of SiGe and Si in ClF3 gas for nanosheet gate-all-around transistor manufacturing: A first principle study
We conduct an atomic-level investigation on how a Ge atom impacts on the SiGe etching rate. The plasmaless dry-etching process in ClF3 gas is considered in this study. We perform the density functional theory to model the elementary reactions of an etchant molecule fluorinating Si/Ge atom. Based on...
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| Veröffentlicht in: | Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2022-01, Vol.40 (1) |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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