Modified atomic layer deposition of MoS2 thin films
As one of the most attractive transition metal dichalcogenides (TMDs), the growth of molybdenum disulfide (MoS2) with industrial compatibility is of great importance. Atomic layer deposition (ALD) has been shown to be a promising method to achieve the growth of high-quality TMD materials. However, M...
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| Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2020-12, Vol.38 (6) |
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| container_title | Journal of vacuum science & technology. A, Vacuum, surfaces, and films |
| container_volume | 38 |
| creator | Zeng, Li Richey, Nathaniel E. Palm, David W. Oh, Il-Kwon Shi, Jingwei Maclsaac, Callisto Jaramillo, Thomas Bent, Stacey F. |
| description | As one of the most attractive transition metal dichalcogenides (TMDs), the growth of molybdenum disulfide (MoS2) with industrial compatibility is of great importance. Atomic layer deposition (ALD) has been shown to be a promising method to achieve the growth of high-quality TMD materials. However, MoS2 films deposited by ALD often are amorphous with nonideal stoichiometry and require high-temperature post-deposition annealing. In this study, we introduce a modified ALD recipe using Mo(CO)6 and H2S, resulting in controllable linear growth behavior, a S-to-Mo ratio of 2:1, and crystalline films at a temperature as low as 190 °C. The growth mechanisms and key factors leading to this improvement are proposed and complemented by kinetics calculations. This newly developed methodology relies on aligning the process time with the reaction kinetics of carbonyl disassociation. The MoS2 films prepared herein were shown to be active hydrogen evolution reaction catalysts. |
| doi_str_mv | 10.1116/6.0000641 |
| format | Article |
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Atomic layer deposition (ALD) has been shown to be a promising method to achieve the growth of high-quality TMD materials. However, MoS2 films deposited by ALD often are amorphous with nonideal stoichiometry and require high-temperature post-deposition annealing. In this study, we introduce a modified ALD recipe using Mo(CO)6 and H2S, resulting in controllable linear growth behavior, a S-to-Mo ratio of 2:1, and crystalline films at a temperature as low as 190 °C. The growth mechanisms and key factors leading to this improvement are proposed and complemented by kinetics calculations. This newly developed methodology relies on aligning the process time with the reaction kinetics of carbonyl disassociation. 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A, Vacuum, surfaces, and films</title><description>As one of the most attractive transition metal dichalcogenides (TMDs), the growth of molybdenum disulfide (MoS2) with industrial compatibility is of great importance. Atomic layer deposition (ALD) has been shown to be a promising method to achieve the growth of high-quality TMD materials. However, MoS2 films deposited by ALD often are amorphous with nonideal stoichiometry and require high-temperature post-deposition annealing. In this study, we introduce a modified ALD recipe using Mo(CO)6 and H2S, resulting in controllable linear growth behavior, a S-to-Mo ratio of 2:1, and crystalline films at a temperature as low as 190 °C. The growth mechanisms and key factors leading to this improvement are proposed and complemented by kinetics calculations. This newly developed methodology relies on aligning the process time with the reaction kinetics of carbonyl disassociation. 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A, Vacuum, surfaces, and films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zeng, Li</au><au>Richey, Nathaniel E.</au><au>Palm, David W.</au><au>Oh, Il-Kwon</au><au>Shi, Jingwei</au><au>Maclsaac, Callisto</au><au>Jaramillo, Thomas</au><au>Bent, Stacey F.</au><aucorp>SLAC National Accelerator Lab., Menlo Park, CA (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modified atomic layer deposition of MoS2 thin films</atitle><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle><date>2020-12-01</date><risdate>2020</risdate><volume>38</volume><issue>6</issue><issn>0734-2101</issn><eissn>1520-8559</eissn><coden>JVTAD6</coden><abstract>As one of the most attractive transition metal dichalcogenides (TMDs), the growth of molybdenum disulfide (MoS2) with industrial compatibility is of great importance. Atomic layer deposition (ALD) has been shown to be a promising method to achieve the growth of high-quality TMD materials. However, MoS2 films deposited by ALD often are amorphous with nonideal stoichiometry and require high-temperature post-deposition annealing. In this study, we introduce a modified ALD recipe using Mo(CO)6 and H2S, resulting in controllable linear growth behavior, a S-to-Mo ratio of 2:1, and crystalline films at a temperature as low as 190 °C. The growth mechanisms and key factors leading to this improvement are proposed and complemented by kinetics calculations. This newly developed methodology relies on aligning the process time with the reaction kinetics of carbonyl disassociation. 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| subjects | 2D materials annealing atomic layer deposition catalysts and catalysis chemical kinetics and dynamics INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY Raman spectroscopy stoichiometry thin films x-ray diffraction x-ray photoelectron spectroscopy |
| title | Modified atomic layer deposition of MoS2 thin films |
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