Comparison of quantitative analyses using SIMS, atom probe tomography, and femtosecond laser ablation inductively coupled plasma mass spectrometry with Si1−XGeX and Fe1−X NiX binary alloys

Due to their electrical and physical properties, Si1−XGeX materials are widely used in microelectronic devices. In particular, the Ge component found within Si1−XGeX compounds is important for enhancing carrier mobility and altering the lattice constant of metal-oxide-semiconductor field-effect tran...

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Veröffentlicht in:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2020-05, Vol.38 (3)
Hauptverfasser:	Jang, Yun Jung, Kim, Seon Hee, Kim, Kyung Joong, Kim, Donghwan, Lee, Yeonhee
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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