Correlation between SiO2 growth rate and difference in electronegativity of metal–oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor

The growth rate of an SiO2 film on various metal–oxide (M–O) underlayers by plasma-enhanced atomic layer deposition (ALD) using tris(dimethylamino)silane precursor and O2 plasma gas is systematically investigated, and the effect of the difference in the electronegativity of the M–O underlayer on the...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2020-05, Vol.38 (3)
Hauptverfasser:	Maeda, Erika, Nabatame, Toshihide, Hirose, Masafumi, Inoue, Mari, Ohi, Akihiko, Ikeda, Naoki, Kiyono, Hajime
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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