Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process

Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process

The objective of this study is to develop an efficient process to synthesize wafer scale p-type cuprous oxide (Cu2O) with the back-end-of-line (BEOL) compatible process (

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2024-09, Vol.42 (5)
Hauptverfasser: Kuo, Chi-Yuan, Lin, Wei-Chen, Lo, Tsung-Tien, Shen, Ching-Hsuan, Shen, Ming-Yu, Lee, Chia-Chan, Lin, Chi-Ping, Lin, Yuang-Ming, Huang, Haw-Tyng, Yeh, Po-Chun, Chen, Hsin-Chu, Wu, Chih-I
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container_issue 5
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container_title Journal of vacuum science & technology. A, Vacuum, surfaces, and films
container_volume 42
creator Kuo, Chi-Yuan
Lin, Wei-Chen
Lo, Tsung-Tien
Shen, Ching-Hsuan
Shen, Ming-Yu
Lee, Chia-Chan
Lin, Chi-Ping
Lin, Yuang-Ming
Huang, Haw-Tyng
Yeh, Po-Chun
Chen, Hsin-Chu
Wu, Chih-I
description The objective of this study is to develop an efficient process to synthesize wafer scale p-type cuprous oxide (Cu2O) with the back-end-of-line (BEOL) compatible process (
doi_str_mv 10.1116/5.0226672
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title Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process
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