Plasma-assisted molecular beam epitaxy for ZnO based II–VI semiconductor oxides and their heterostructures

Plasma-assisted molecular beam epitaxy of ZnO epilayers and MgZnO/ZnO heterostructures on Al 2 O 3 (0001) substrates is described. A thin MgO layer is employed as a buffer for ZnO. The influence of the buffer on the initial growth of ZnO is discussed with the corresponding reflection high-energy ele...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2000-05, Vol.18 (3), p.1514-1517
Hauptverfasser:	Chen, Yefan, Ko, Hang-ju, Hong, Soon-ku, Sekiuchi, Takashi, Yao, Takafumi, Segawa, Yusaburo
Format:	Artikel
Sprache:	eng
Schlagworte:	Cathodoluminescence Heterojunctions Image reconstruction Molecular beam epitaxy Morphology Nucleation Plasma oscillations Reflection high energy electron diffraction Semiconducting zinc compounds Semiconductor growth
Online-Zugang:	Volltext
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