Plasma-assisted molecular beam epitaxy for ZnO based II–VI semiconductor oxides and their heterostructures
Plasma-assisted molecular beam epitaxy of ZnO epilayers and MgZnO/ZnO heterostructures on Al 2 O 3 (0001) substrates is described. A thin MgO layer is employed as a buffer for ZnO. The influence of the buffer on the initial growth of ZnO is discussed with the corresponding reflection high-energy ele...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2000-05, Vol.18 (3), p.1514-1517 |
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| container_title | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
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| creator | Chen, Yefan Ko, Hang-ju Hong, Soon-ku Sekiuchi, Takashi Yao, Takafumi Segawa, Yusaburo |
| description | Plasma-assisted molecular beam epitaxy of ZnO epilayers and MgZnO/ZnO heterostructures on
Al
2
O
3
(0001)
substrates is described. A thin MgO layer is employed as a buffer for ZnO. The influence of the buffer on the initial growth of ZnO is discussed with the corresponding reflection high-energy electron diffraction (RHEED) studies. We found that the MgO buffer promotes the lateral growth of ZnO, which results in two-dimensional growth. A
3×3
reconstruction is observed and the RHEED intensity oscillations are recorded. The RHEED oscillations have been used in situ to monitor and control the growth of MgZnO/ZnO heterostructures. MgZnO/ZnO single-quantum-well structures have been grown and studied by cathodoluminescence. |
| doi_str_mv | 10.1116/1.591416 |
| format | Article |
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Al
2
O
3
(0001)
substrates is described. A thin MgO layer is employed as a buffer for ZnO. The influence of the buffer on the initial growth of ZnO is discussed with the corresponding reflection high-energy electron diffraction (RHEED) studies. We found that the MgO buffer promotes the lateral growth of ZnO, which results in two-dimensional growth. A
3×3
reconstruction is observed and the RHEED intensity oscillations are recorded. The RHEED oscillations have been used in situ to monitor and control the growth of MgZnO/ZnO heterostructures. MgZnO/ZnO single-quantum-well structures have been grown and studied by cathodoluminescence.</description><identifier>ISSN: 0734-211X</identifier><identifier>ISSN: 1071-1023</identifier><identifier>EISSN: 1520-8567</identifier><identifier>DOI: 10.1116/1.591416</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><subject>Cathodoluminescence ; Heterojunctions ; Image reconstruction ; Molecular beam epitaxy ; Morphology ; Nucleation ; Plasma oscillations ; Reflection high energy electron diffraction ; Semiconducting zinc compounds ; Semiconductor growth</subject><ispartof>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-05, Vol.18 (3), p.1514-1517</ispartof><rights>American Vacuum Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-25ca91a65e0fe1e86850df9111483401b68182c7dd05f511e6c2f239039b6a2c3</citedby><cites>FETCH-LOGICAL-c325t-25ca91a65e0fe1e86850df9111483401b68182c7dd05f511e6c2f239039b6a2c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,794,4512,23930,23931,25140,27924,27925</link.rule.ids></links><search><creatorcontrib>Chen, Yefan</creatorcontrib><creatorcontrib>Ko, Hang-ju</creatorcontrib><creatorcontrib>Hong, Soon-ku</creatorcontrib><creatorcontrib>Sekiuchi, Takashi</creatorcontrib><creatorcontrib>Yao, Takafumi</creatorcontrib><creatorcontrib>Segawa, Yusaburo</creatorcontrib><title>Plasma-assisted molecular beam epitaxy for ZnO based II–VI semiconductor oxides and their heterostructures</title><title>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</title><description>Plasma-assisted molecular beam epitaxy of ZnO epilayers and MgZnO/ZnO heterostructures on
Al
2
O
3
(0001)
substrates is described. A thin MgO layer is employed as a buffer for ZnO. The influence of the buffer on the initial growth of ZnO is discussed with the corresponding reflection high-energy electron diffraction (RHEED) studies. We found that the MgO buffer promotes the lateral growth of ZnO, which results in two-dimensional growth. A
3×3
reconstruction is observed and the RHEED intensity oscillations are recorded. The RHEED oscillations have been used in situ to monitor and control the growth of MgZnO/ZnO heterostructures. MgZnO/ZnO single-quantum-well structures have been grown and studied by cathodoluminescence.</description><subject>Cathodoluminescence</subject><subject>Heterojunctions</subject><subject>Image reconstruction</subject><subject>Molecular beam epitaxy</subject><subject>Morphology</subject><subject>Nucleation</subject><subject>Plasma oscillations</subject><subject>Reflection high energy electron diffraction</subject><subject>Semiconducting zinc compounds</subject><subject>Semiconductor growth</subject><issn>0734-211X</issn><issn>1071-1023</issn><issn>1520-8567</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNqd0M1KxDAQB_AgCq4f4CPkph66ZpombY-y-LEgrAcV8VKy6RQrbbNmUnFvvoNv6JMYWfEBvMwc5scw82fsCMQUAPQZTFUJGegtNgGViqRQOt9mE5HLLEkBHnfZHtGLEEIrKSesu-0M9SYxRC0FrHnvOrRjZzxfouk5rtpg3te8cZ4_DQu-NBTRfP718fkw54R9a91QjzbEuXtvayRuhpqHZ2w9f8aA3lHwcT56pAO205iO8PC377P7y4u72XVys7iaz85vEitTFZJUWVOC0QpFg4CFLpSomzK-lxUyE7DUBRSpzetaqEYBoLZpk8pSyHKpTWrlPjve7F159zoihapvyWLXmQHdSFWeqVyUsUZ5spE23kkem2rl2974dQWi-smzgmqTZ6SnG0o2RhJaN_zLvjn_56pV3chvL6KE-Q</recordid><startdate>200005</startdate><enddate>200005</enddate><creator>Chen, Yefan</creator><creator>Ko, Hang-ju</creator><creator>Hong, Soon-ku</creator><creator>Sekiuchi, Takashi</creator><creator>Yao, Takafumi</creator><creator>Segawa, Yusaburo</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7TC</scope></search><sort><creationdate>200005</creationdate><title>Plasma-assisted molecular beam epitaxy for ZnO based II–VI semiconductor oxides and their heterostructures</title><author>Chen, Yefan ; Ko, Hang-ju ; Hong, Soon-ku ; Sekiuchi, Takashi ; Yao, Takafumi ; Segawa, Yusaburo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-25ca91a65e0fe1e86850df9111483401b68182c7dd05f511e6c2f239039b6a2c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Cathodoluminescence</topic><topic>Heterojunctions</topic><topic>Image reconstruction</topic><topic>Molecular beam epitaxy</topic><topic>Morphology</topic><topic>Nucleation</topic><topic>Plasma oscillations</topic><topic>Reflection high energy electron diffraction</topic><topic>Semiconducting zinc compounds</topic><topic>Semiconductor growth</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, Yefan</creatorcontrib><creatorcontrib>Ko, Hang-ju</creatorcontrib><creatorcontrib>Hong, Soon-ku</creatorcontrib><creatorcontrib>Sekiuchi, Takashi</creatorcontrib><creatorcontrib>Yao, Takafumi</creatorcontrib><creatorcontrib>Segawa, Yusaburo</creatorcontrib><collection>CrossRef</collection><collection>Mechanical Engineering Abstracts</collection><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Yefan</au><au>Ko, Hang-ju</au><au>Hong, Soon-ku</au><au>Sekiuchi, Takashi</au><au>Yao, Takafumi</au><au>Segawa, Yusaburo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Plasma-assisted molecular beam epitaxy for ZnO based II–VI semiconductor oxides and their heterostructures</atitle><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle><date>2000-05</date><risdate>2000</risdate><volume>18</volume><issue>3</issue><spage>1514</spage><epage>1517</epage><pages>1514-1517</pages><issn>0734-211X</issn><issn>1071-1023</issn><eissn>1520-8567</eissn><coden>JVTBD9</coden><abstract>Plasma-assisted molecular beam epitaxy of ZnO epilayers and MgZnO/ZnO heterostructures on
Al
2
O
3
(0001)
substrates is described. A thin MgO layer is employed as a buffer for ZnO. The influence of the buffer on the initial growth of ZnO is discussed with the corresponding reflection high-energy electron diffraction (RHEED) studies. We found that the MgO buffer promotes the lateral growth of ZnO, which results in two-dimensional growth. A
3×3
reconstruction is observed and the RHEED intensity oscillations are recorded. The RHEED oscillations have been used in situ to monitor and control the growth of MgZnO/ZnO heterostructures. MgZnO/ZnO single-quantum-well structures have been grown and studied by cathodoluminescence.</abstract><doi>10.1116/1.591416</doi><tpages>4</tpages></addata></record> |
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| ispartof | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-05, Vol.18 (3), p.1514-1517 |
| issn | 0734-211X 1071-1023 1520-8567 |
| language | eng |
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| source | AIP Journals Complete |
| subjects | Cathodoluminescence Heterojunctions Image reconstruction Molecular beam epitaxy Morphology Nucleation Plasma oscillations Reflection high energy electron diffraction Semiconducting zinc compounds Semiconductor growth |
| title | Plasma-assisted molecular beam epitaxy for ZnO based II–VI semiconductor oxides and their heterostructures |
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