Ultrathin oxide films deposited using electron cyclotron resonance sputter

Ultrathin oxide films ( SiO 2 , Al 2 O 3 ,Ta 2 O 5 ) with a minimum thickness of 2 nm have been deposited at low temperature by electron cyclotron resonance (ECR) sputter utilizing a plasma source coupled with a divided microwave beam. The uniformity of the film thickness was within ±2% over a 150 m...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 1999-09, Vol.17 (5), p.2222-2225
Hauptverfasser:	Amazawa, Takao, Ono, Toshiro, Shimada, Masaru, Matsuo, Seitaro, Oikawa, Hideo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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