Passivation of GaAs using gallium-gadolinium oxides
The role of Gd 2 O 3 is investigated in our previously discovered oxide films of Ga 2 O 3 (Gd 2 O 3 ) for GaAs surface passivation. Based on the systematic dependence of the dielectric properties of (Ga 2 O 3 ) 1−x ( Gd 2 O 3 ) x on the Gd (x) content, we showed that pure gallium oxide does not effe...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 1999-05, Vol.17 (3), p.1294-1296 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The role of
Gd
2
O
3
is investigated in our previously discovered oxide films of
Ga
2
O
3
(Gd
2
O
3
)
for GaAs surface passivation. Based on the systematic dependence of the dielectric properties of
(Ga
2
O
3
)
1−x
(
Gd
2
O
3
)
x
on the Gd (x) content, we showed that pure gallium oxide does not effectively passivate GaAs, and
Gd
2
O
3
is a necessary component to stabilize the gallium oxide in the
3
+
fully oxidized state due to the electropositive nature of
Gd
+3
.
This gives rise to electrically insulting films of low leakage current and high electrical breakdown strength. |
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| ISSN: | 0734-211X 1071-1023 1520-8567 |
| DOI: | 10.1116/1.590743 |