Model for etch depth dependence on GaAs via hole diameter
Reactive ion etching of via holes for grounding of monolithic microwave integrated circuits has become the industry standard. It is well known that the via etch rate decreases as a function of decreasing via mask diameter as well as increasing etch depth. A model has been developed which relates the...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 1999-05, Vol.17 (3), p.961-964 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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